Anyi-Semic / ST-Sanan JV (Chongqing 8-inch SiC) · 安意法半导体有限公司

Anyiwa Semiconductor Co., Ltd. (STMicroelectronics–Sanan JV) | Compound Semiconductor

STMicroelectronics’ China-for-China twin of its Catania 200mm SiC strategy: an 8-inch automotive SiC device fab built in ~20 months (per ST’s CEO), line ac…
Published

October 11, 2026

TipWhy This Matters

STMicroelectronics’ China-for-China twin of its Catania 200mm SiC strategy: an 8-inch automotive SiC device fab built in ~20 months (per ST’s CEO), line activated 27 February 2025, and reported by March 2026 as China’s first 8-inch automotive-grade SiC line to reach volume production (2,000 wafers/week). JV entity formed August 2023; total project investment ~¥23 billion (~$3.2B) plus ¥7 billion for the co-located Chongqing Sanan substrate plant (activated September 2024).

Chinese name: 安意法半导体有限公司 (Ānyìfǎ Bàndǎotǐ Yǒuxiàn Gōngsī)

What does this facility make?

8-inch car-grade SiC MOSFET epi and die, ST-branded, feeding Chinese EV makers’ main-drive inverters.

Why does it matter?

The clearest case of a Western IDM localizing advanced power-device manufacturing inside China for the Chinese market — a structural answer to ‘de-risking’ pressure — and Chongqing’s anchor in its EV-supply-chain buildout around Changan.

Key Facts

Company Anyiwa Semiconductor Co., Ltd. (STMicroelectronics–Sanan JV)
Type Compound Semiconductor
Category JV
Capability 8-inch automotive-grade SiC epitaxy + device (chip) fab, 480,000 wafers/year planned full capacity; output sold to ST; companion 8-inch substrate plant 重庆三安 (¥7 billion)
Status Operational
Capacity Not yet recorded
Investment ¥230亿元
Funding Source Foreign
Location Chongqing, Chongqing Municipality
Current Node Not yet researched
Entity List No
Equipment Origin Not yet assessed
Last Verified Not recorded (newest source dated May 2026)

Technical Complexity

4/5

Technology Node Trajectory

Node history not yet researched.

Project Timeline

  • Aug 2023 — JV company established in Chongqing Xiyong micro-electronics park
  • Sep 2024 — Companion Chongqing Sanan 8-inch substrate plant activated
  • Feb 2025 — 8-inch SiC device line activated (通线 ceremony, Xinhua)
  • Mar 2026 — Volume production of the 2,000 wafers/week car-grade line reported (China first)

Sources


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