Samsung Xi’an · 三星(中国)半导体有限公司

Samsung Electronics | Memory

Samsung’s largest NAND flash site outside South Korea and a major share of its total NAND output (domestic Korean reporting put it around 40%) — the single…
Published

October 11, 2026

TipWhy This Matters

Samsung’s largest NAND flash site outside South Korea and a major share of its total NAND output (domestic Korean reporting put it around 40%) — the single biggest reminder that ‘China’s semiconductor sector’ includes large-scale foreign-owned manufacturing on Chinese soil, not only domestic Chinese firms. Samsung reported a 67.5% year-on-year increase in Xi’an investment in its 2025 business report.

Chinese name: 三星(中国)半导体有限公司 (Sānxīng (Zhōngguó) Bàndǎotǐ Yǒuxiàn Gōngsī)

What does this facility make?

3D NAND flash memory wafers; the fab has progressed from 128-layer (V6, now phased out) to 236-layer (V8, in mass production as of early 2026), with 286-layer V9 production targeted for later in 2026.

Why does it matter?

A test case for how far US export controls reach into foreign multinationals’ own China operations: Samsung ships significantly more semiconductor product to China than to the US by value, and continues to operate and upgrade Xi’an under an annual US tool-export licensing regime (replacing an earlier open-ended waiver) rather than a blanket ban.

Key Facts

Company Samsung Electronics
Type Memory
Category Foreign-Invested
Capability 3D NAND flash memory, 12-inch (300mm) wafers
Status Operational
Capacity Not yet recorded
Investment Not disclosed
Funding Source Foreign
Location Xi’an, Shaanxi
Current Node 236-layer 3D NAND (V8)
Entity List No
Equipment Origin Not yet assessed
Last Verified Not recorded (newest source dated Aug 2026)

Technical Complexity

4.4/5

Technology Node Trajectory

  • 2026: 236-layer 3D NAND (V8)

Project Timeline

  • Mar 2026 — Reported to be advancing Xi’an to 236-layer (V8) NAND in mass production
  • May 2026 — Reported to begin cleanroom build-out for V9 NAND infrastructure following the V8 ramp and V6 phase-out

Sources


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